Resistance Drain-Source RDS (on)
:
Configuration
:
Maximum Operating Temperature
:
Mounting Style
: Through Hole
Transistor Polarity
: P-Channel
Packaging
: Tube
Package / Case
: TO-220AB
Gate-Source Breakdown Voltage
: 20 V
Drain-Source Breakdown Voltage
: - 150 V
Continuous Drain Current
: - 13 A
Features: ` Advanced Process Technology
` Dynamic dv/dt Rating
` 175 Operating Temperature
` Fast Switching
` P-Channel
` Fully Avalanche Rated
` Lead-FreeSpecifications
|
|
Parameter |
Max. |
Units |
|
ID @ TC = 25 |
Continuous Drain Current VGS @ -10V |
-13 |
A |
|
ID @ TC = 100 |
Continuous Drain Current VGS @ -10V |
-9.0 |
|
IDM |
Pulsed Drain Current |
-44 |
|
PD @ TC = 25 |
Power Dissipation |
110 |
W |
|
|
Linear Derating Factor |
0.71 |
W/ |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
EAS |
Single Pulse Avalanche Energy |
310 |
mJ |
|
IAR |
Avalanche Current |
-6.6 |
A |
|
EAR |
Repetitive Avalanche Energy |
11 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
-5.0 |
V/ns |
|
TJ
TSTG |
Operating Junction
Storage Temperature Range |
-55 to + 175 |
|
|
|
Soldering Temperature, for 10 seconds |
300 (1.6 mm from case ) |
|
|
Mounting torque, 6-32 or M3 screw |
10 lbf•in (1.1N•m) |
|
DescriptionFifth Generation HEXFETs IRF6215PbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package IRF6215PbF is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Parameters: | Technical/Catalog Information | IRF6215PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25° C | 13A |
| Rds On (Max) @ Id, Vgs | 290 mOhm @ 6.6A, 10V |
| Input Capacitance (Ciss) @ Vds | 860pF @ 25V |
| Power - Max | 110W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 66nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF6215PBF
IRF6215PBF
|
IRF6215PBF Data Sheet
