IRF6215

MOSFET P-CH 150V 13A TO-220AB

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IRF6215 Picture
SeekIC No. : 004376584 Detail

IRF6215: MOSFET P-CH 150V 13A TO-220AB

floor Price/Ceiling Price

US $ .83~.83 / Piece | Get Latest Price
Part Number:
IRF6215
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~300
  • Unit Price
  • $.83
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/1/7

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Product Details

Description



Features:

· Advanced Process Technology
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· P-Channel
· Fully Avalanche Rated





Specifications

Parameter
Max.
Units
ID @ TC = 25 Continuous Drain Current, VGS @ -10V
-13
A
ID @ TC = 100 Continuous Drain Current, VGS @ -10V
-9.0
IDM Pulsed Drain Current
-44
PD @TC = 25 Max. Power Dissipation
110
W
Linear Derating Factor0
0.71
W/
VGS Gate-to-Source Voltage
± 20
V
EAS Single Pulse Avalanche Energy
310
mJ
IAR Avalanche Current
-6.6
A
EAR Repetitive Avalanche Energy
11
mJ
dv/dt Peak Diode Recovery dv/dt
-5.0
V/ns
TJ,TSTG Operating Junction Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
10 lbf•in (1.1N•m)





Description

Fifth Generation HEXFETs IRF6215 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package IRF6215 is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.






Parameters:

Technical/Catalog InformationIRF6215
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C13A
Rds On (Max) @ Id, Vgs290 mOhm @ 6.6A, 10V
Input Capacitance (Ciss) @ Vds 860pF @ 25V
Power - Max110W
PackagingBulk
Gate Charge (Qg) @ Vgs66nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRF6215
IRF6215



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