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IRF620A

Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology`Lower Input Capacitance`Improved Gate Charge`Extended Safe Operating Area`Lower Leakage Current : 10 A (Max.) @ VDS = 200V`Low RDS(ON) : 0.626 (Typ.)Specifications SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage ...

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SeekIC No. : 004376580 Detail

IRF620A: Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology`Lower Input Capacitance`Improved Gate Charge`Extended Safe Operating Area`Lower Leakage Current : 10 A (Max.) @ VDS = 200V`Low RDS...

IRF620A Data Sheet

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Part Number:
IRF620A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

`Avalanche Rugged Technology
`Rugged Gate Oxide Technology
`Lower Input Capacitance
`Improved Gate Charge
`Extended Safe Operating Area
`Lower Leakage Current : 10 A (Max.) @ VDS = 200V
`Low RDS(ON) : 0.626 (Typ.)


Specifications

SYMBOL PARAMETER VALUE UNIT
VDSS Drain-Source Voltage 200 V
ID Continuous Drain Current (TC=25 ) 5 A
Continuous Drain Current (TC=100) 3.2 A
IDM Drain Current-Pulsed 18 A
VGS Gate-to-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy 67 mJ
IAR Avalanche Current 5 A
EAR Repetitive Avalanche Energy 4.7 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
PD Total Power Dissipation (TC=25)
Linear Derating Factor		 47
0.38		 W
TJ , TSTG Operating Junction and
Storage Temperature Range		 - 55 to +150
TL Maximum Lead Temp. for Soldering
Purposes, 1/8 " from case for 5-seconds		 300



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