IRF620

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 5.2 A
Resistance Drain-Source RDS (on) : 0.8 Ohms


Features:

• 5.0A, 200V
• r_DS(ON) = 0.800
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
   - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

                                                                                                    IRF620       UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . V_DS             200               V
Drain to Gate Voltage (R_GS = 20k) (Note 1) . . . . . . V_DGR          200               V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . I_D                5.0              A
T_C = 100  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D                3.0               A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . .. . I_DM              20                A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . .V_GS              ±20             V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . P_D               40                W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . . .0.32           W/
Single Pulse Avalanche Energy Rating (Note 4) . .. . . E_AS              85                mJ
Operating and Storage Temperature . . . . . . . . .  . . .T_J, T_STG      -55 to 150      
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . .T_L                 300              
Package Body for 10s, See TB334. . . . . . . . . . .  . . . .T_pkg             260               

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25 to 125


Description

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types of IRF620 can be operated directly from integrated circuits.

Formerly developmental type TA9600.