IRF6156

FET Feature: Logic Level Gate
Mounting Type: Surface Mount
Series: -
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 20V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 6.5A
Power - Max: 2.5W
Gate Charge (Qg) @ Vgs: 18nC @ 5V
Manufacturer: International Rectifier
Input Capacitance (Ciss) @ Vds: 950pF @ 15V
Packaging: Bulk
Rds On (Max) @ Id, Vgs: 40 mOhm @ 6.5A, 4.5V
Package / Case: 6-FlipFet?
Supplier Device Package: 6-FlipFet?


Features:

 Ultra Low R_SS(on) per Footprint Area
 Low Thermal Resistance
 Bi-Directional N-Channel Switch
 Super Low Profile (<.8mm)
 Available Tested on Tape & Reel
 ESD Protection Diode


Specifications

	Parameter	Max.	Units
VSS	Source-to-Source Voltage	20	V
IS @ TA = 25°C	Continuous Current, VGS1 = VGS2 = 4.5V	±6.5	A
IS @ TA = 70°C	Continuous Current, VGS1 = VGS2 = 4.5V	±5.2
ISM	Pulsed Current	33
PD @TA = 25°C	Power Dissipation	2.5	W
PD @TA = 70°C	Power Dissipation	1.6
	Linear Derating Factor	20	mW/°C
VGS	Gate-to-Source Voltage	±12	V
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150	°C

Description

True chip-scale packaging is available from International Rectifier.Through the use of advanced processing techniques and a unique packaging concept, extremely low on-resistance and the highest power densities in the industry have been made available for battery and load management applications. These benefits of IRF6156,combined with the ruggedized device design that International Rectifier is well known for, provide the designer with an extremely efficient and reliable device.

The FlipFET^TM package, is one-fifth the footprint of a comparable TSSOP-8 package and has a profile of less than .8mm. Combined with the low thermal resistance of the die level device, IRF6156 makes the FlipFET^TM the best device for applications where printed circuit board space is at a premium and in extremely thin application environments such as battery packs, mobile phones and PCMCIA cards.