IRF6150

Input Capacitance (Ciss) @ Vds: -
Mounting Type: Surface Mount
FET Type: 2 P-Channel (Dual)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) @ Vgs: -
Series: HEXFET®
Manufacturer: International Rectifier
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25° C: 7.9A
Rds On (Max) @ Id, Vgs: 36 mOhm @ 7.9A, 4.5V
Power - Max: 3W
Package / Case: 16-FlipFet?
Supplier Device Package: 16-FlipFet?


Features:

 Ultra Low R_SS(on) per Footprint Area
 Low Thermal Resistance
 Bi-Directional P-Channel Switch
 Super Low Profile (<.8mm)
 Available Tested on Tape & Reel


Specifications

	Parameter	Max.	Units
VSS	Source-to-Source Voltage	-20	V
IS @ TC = 25°C	Continuous Current,VGS1 = VGS2 = -4.5V	±7.9	A
IS @ TC = 70°C	Continuous Current, VGS1 = VGS2 = -4.5V	±6.3
ISM	Pulsed Current	±40
PD @TC = 25°C	Power Dissipation	3.0	W
PD @TC = 70°C	Power Dissipation	1.9
	Linear Derating Factor	24	mW/°C
VGS	Gate-to-Source Voltage	±12	V
TJ.TSTG	Junction and Storage Temperature Range	-55 to + 150	°C

Description

True chip-scale packaging is available from International Rectifier. Through the use of advanced processing techniques of IRF6150 and a unique packaging concept, extremely low on-resistance and the highest power densities in the industry have been made available for battery and load management applications. These benefits of IRF6150, combined with the ruggedized device design that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device.

The FlipFET^TM package, is one-third the footprint of a comparable SO-8 package and has a profile of less than .8mm. Combined with the low thermal resistance of the die level device, IRF6150 makes the  FlipFET^TM the best device for applications where printed circuit board space is at a premium and in extremely thin application environments such as battery packs, cell phones and PCMCIA cards.


Parameters:

Technical/Catalog Information	IRF6150
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	7.9A
Rds On (Max) @ Id, Vgs	36 mOhm @ 7.9A, 4.5V
Input Capacitance (Ciss) @ Vds	-
Power - Max	3W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	-
Package / Case	FlipFet?-16
FET Feature	Standard
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF6150 IRF6150 IRF6150CT ND IRF6150CTND IRF6150CT