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IRF610A

Features: Avalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved Gate ChargeExtended Safe Operating AreaLower Leakage Current : 10 A (Max.) @ VDS = 200VLow RDS(ON) : 1.169 (Typ.)Specifications Symbol Characteristic Value Unit VDSS Drain-to-Sour...

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SeekIC No. : 004376573 Detail

IRF610A: Features: Avalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved Gate ChargeExtended Safe Operating AreaLower Leakage Current : 10 A (Max.) @ VDS = 200VLow RDS(ON) : ...

IRF610A Data Sheet

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Part Number:
IRF610A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Description



Features:

Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = 200V
Low RDS(ON) : 1.169 (Typ.)


Specifications

Symbol
Characteristic
Value
Unit
VDSS
 Drain-to-Source Voltage
200
V
ID
 Continuous Drain Current (TC=25)
3.3
A
Continuous Drain Current (TC=100)
2.1
A
IDM
 Drain Current-Pulsed
10
A
VGS
 Gate-to-Source Voltage
±30
V
EAS
 Single Pulsed Avalanche Energy
44
mJ
IAR
 Avalanche Current
3.3
A
EAR
 Repetitive Avalanche Energy
3.8
mJ
dv/dt
 Peak Diode Recovery dv/dt
5.0
V/ns
PD
 Total Power Dissipation (TC=25)
Linear Derating Factor
38
0.31
W
W/
TJ,TSTG
 Operating Junction and
Storage Temperature Range
- 55 to +150
TL
 Operating Junction and
Storage Temperature Range
300



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