MOSFET P-CH 20V 5.1A FLIPFET
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Series: | HEXFET® | Manufacturer: | International Rectifier | ||
FET Type: | MOSFET P-Channel, Metal Oxide | Transistor Type: | - | ||
Current - Collector (Ic) (Max): | - | FET Feature: | Logic Level Gate | ||
Continuous Drain Current : | 15 A | Drain to Source Voltage (Vdss): | 20V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 5.1A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 65 mOhm @ 5.1A, 4.5V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 1.2V @ 250µA | Gate Charge (Qg) @ Vgs: | 21nC @ 5V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 1230pF @ 15V | ||
Power - Max: | 2.2W | Mounting Type: | Surface Mount | ||
Package / Case: | 4-FlipFet? | Supplier Device Package: | 4-FlipFet? |
Parameter | Max. | Units | |
VDS | Drain- Source Voltage | -20 | V |
ID @ TA = 2 | Continuous Drain Current, VGS @ 4.5V | ±5.1 | A |
ID @ TA = 70 | Continuous Drain Current, VGS @ 4.5V | ±3.5 | |
IDM | Pulsed Drain Current | ±35 | |
PD @TA = 25 | Power Dissipation | 2.2 | W |
PD @TA = 25 | Power Dissipation | 1.4 | |
Linear Derating Factor | 17 | mW/ | |
VGS | Gate-to-Source Voltage | ± 12 | V |
TJ, TSTG | Junction and Storage Temperature Range | -55 to + 150 |
True chip-scale packaging is available from International Rectifier IRF6100PbF. Through the use of advanced processing techniques, and a unique packaging concept, extremely low on-resistance and the highest power densities in the industry have been made available for battery and load management applications. These benefits of IRF6100PbF, combined with the ruggedized device design , that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device.
The FlipFET™ package, is one-third the footprint of a comparable SOT-23 package and has a profile of less than .8mm. Combined with the low thermal resistance of the die level device, IRF6100PbF makes the FlipFET™ the best device for application where printed circuit board space is at a premium and in extremely thin application environments such as battery packs, cell phones and PCMCIA cards.
Technical/Catalog Information | IRF6100PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 5.1A |
Rds On (Max) @ Id, Vgs | 65 mOhm @ 5.1A, 4.5V |
Input Capacitance (Ciss) @ Vds | 1230pF @ 15V |
Power - Max | 2.2W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 21nC @ 5V |
Package / Case | 4-FlipFet? |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRF6100PBF IRF6100PBF |