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IRF1503S

Application 14V Automotive Electrical Systems 14V Electronic Power SteeringSpecifications Parameter Max. Units ID @ TC = 25 Continuous Drain Current, VGS @ 10V(Silicon limited) 190 A ID @ TC = 100 Continuous Drain Current, VGS @ 10V(See Fig.9) 130 ID @ TC = 25 Continuous Dr...

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SeekIC No. : 004376395 Detail

IRF1503S: Application 14V Automotive Electrical Systems 14V Electronic Power SteeringSpecifications Parameter Max. Units ID @ TC = 25 Continuous Drain Current, VGS @ 10V(Silicon limited) 190 A ...

IRF1503S Data Sheet

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Part Number:
IRF1503S
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Application

14V Automotive Electrical Systems
14V Electronic Power Steering


Specifications

  Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V(Silicon limited) 190 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V(See Fig.9) 130
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Package limited) 75
IDM Pulsed Drain Current 960
PD @ TC = 25 Power Dissipation 200 W
  Linear Derating Factor 1.3 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 510 mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value 980
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy mJ
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to 175
  Soldering Temperature, for 10 seconds 300 (1.6 mm from case)
  Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)  
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
 Starting TJ = 25, L = 0.049mH RG = 25, IAS = 140A. (See Figure 12).
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.


Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits of the IRF1503S combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




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