IRF1503LPBF

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Gate Charge (Qg) @ Vgs: 200nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 75A
Power - Max: 200W
Manufacturer: International Rectifier
Supplier Device Package: TO-262
Input Capacitance (Ciss) @ Vds: 5730pF @ 25V
Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 140A, 10V


Application

· 14V Automotive Electrical Systems
· 14V Electronic Power Steering
· Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC=25	Continuous Drain Current,VGS @ 10V(Silicon limited)	190	A
ID @TC=100	Continuous Drain Current,VGS @ 10V(See Fig.9)	130
ID @ TC=25	Continuous Drain Current,VGS @ 10V(Package limited)	75
IDM	Pulsed Drain Current	960
PD @TC=25	Power Dissipation	200	W
	Linear Derating Factor	1.3	W/
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy	510	mJ
EAS(tested)	Single Pulse Avalanche Energy Tested Value	980
IAR	Avalanche Current	See Fig.12a, 12b, 15, 16	A
EAR	Repetitive Avalanche Energy		mJ
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting Torque, 6-32 or M3 screw	10 lbf`in (1.1N`m)

Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.Additional features of this HEXFET power MOSFET are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits of the IRF1503LPbF combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Parameters:

Technical/Catalog Information	IRF1503LPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	3.3 mOhm @ 140A, 10V
Input Capacitance (Ciss) @ Vds	5730pF @ 25V
Power - Max	200W
Packaging	Tube
Gate Charge (Qg) @ Vgs	200nC @ 10V
Package / Case	TO-262-3 (Straight Leads)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF1503LPBF IRF1503LPBF