IRF1407PBF

MOSFET MOSFT 75V 130A 7.8mOhm 160nC

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SeekIC No. : 00148157 Detail

IRF1407PBF: MOSFET MOSFT 75V 130A 7.8mOhm 160nC

floor Price/Ceiling Price

US $ 1.08~1.45 / Piece | Get Latest Price
Part Number:
IRF1407PBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.45
  • $1.3
  • $1.15
  • $1.08
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/11

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 130 A
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 130 A


Application

􀁏· Integrated Starter Alternator
􀁏· 42 Volts Automotive Electrical Systems
􀁏· Lead-Free



Specifications

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 130 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 92
IDM Pulsed Drain Current 520
PD @TC = 25°C Power Dissipation 330 W
  Linear Derating Factor 2.2 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 390 mJ
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy mJ
dv/dt Peak Diode Recovery dv/dt 4.6 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 175 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)



Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating of the IRF1407PbF. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




Parameters:

Technical/Catalog InformationIRF1407PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25° C130A
Rds On (Max) @ Id, Vgs7.8 mOhm @ 78A, 10V
Input Capacitance (Ciss) @ Vds 5600pF @ 25V
Power - Max330W
PackagingBulk
Gate Charge (Qg) @ Vgs250nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF1407PBF
IRF1407PBF



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