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IRF1407

MOSFET N-CH 75V 130A TO-220AB

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SeekIC No. : 004376386 Detail

IRF1407: MOSFET N-CH 75V 130A TO-220AB

IRF1407 Data Sheet

floor Price/Ceiling Price

US $ 1.65~1.65 / Piece | Get Latest Price
Part Number:
IRF1407
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~150
  • Unit Price
  • $1.65
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

`Advanced Process Technology
`Ultra Low On-Resistance
`Dynamic dv/dt Rating
`175 Operating Temperature
`Fast Switching
`Repetitive Avalanche Allowed up to Tjmax




Application

·Integrated Starter Alternator
·42 Volts Automotive Electrical Systems




Specifications

Parameter Max. Units
ID @ TC =25 Continuous Drain Current,VGS @ 10V 130 A
ID @ TC =100 Continuous Drain Current,VGS @ 10V 92
IDM Pulsed Drain Current 520
PD @ TC =25 Power Dissipation 330 W
Linear Derating Factor 2.2 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 390 mJ
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy mJ
dv/dt Peak Diode Recovery dv/dt 4.6 V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbf.in (1.1 N.m)





Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET of the IRF1407 are a 175 junctio operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits of the IRF1407 combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.






Parameters:

Technical/Catalog InformationIRF1407
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25° C130A
Rds On (Max) @ Id, Vgs7.8 mOhm @ 78A, 10V
Input Capacitance (Ciss) @ Vds 5600pF @ 25V
Power - Max330W
PackagingBulk
Gate Charge (Qg) @ Vgs250nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRF1407
IRF1407



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