IRF1405ZS-7P

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Series: HEXFET®
Packaging: Tube
Power - Max: 230W
Gate Charge (Qg) @ Vgs: 230nC @ 10V
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Vgs(th) (Max) @ Id: 4V @ 150µA
Current - Continuous Drain (Id) @ 25° C: 120A
Input Capacitance (Ciss) @ Vds: 5360pF @ 25V
Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 88A, 10V
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Supplier Device Package: D2PAK (7-Lead)


Features:

`Advanced Process Technology
`Ultra Low On-Resistance
`175 Operating Temperatur
`Fast Switching
`Repetitive Avalanche Allowed up to Tjmax




Specifications

	Parameter	Max.	Units
ID @ TC=25	Continuous Drain Curren VGS@ 10V (Silicon Limited)	150	A
ID @ TC=100	Continuous Drain Curren VGS@ 10V(See Fig. 9)	100
ID @ TC=25	Continuous Drain Curren VGS@ 10V (Package Limited)	120
IDM	Pulsed Drain Current	590
PD@ TC= 25	Maximum Power Dissipatio	230	W
	Linear Derating Factor	1.5	W/
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy (Thermally Limited)	250	mJ
EAS(tested)	Single Pulse Avalanche Energy Tested Value	810
IAR	Avalanche Current	See Fig.12a,12b,15,16	A
EAR	Repetitive Avalanche Energy		mJ
TJ TSTG	Operating Junction Storage Temperature Range	-55 to 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)
	Mounting torque, 6-32 or M3 screw	10 lbf`in (1.1N`m)

	Parameter	Typ	Max.	Units
RJC RCS RJA RJA	Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB Mount, steady state)	- 0.50 - -	0.65 - 62 40	/W

Description

Specifically designed for Automotive applications,this HEXFET^® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 junction operatin temperature, fast switching speed and improved repetitive avalanche rating . These features of the IRF1405ZS-7P combine to make this design an extremely efficient and reliable device for use in Automotive applicaions and a wide variety of other applications.