Features: `Advanced Process Technology `Ultra Low On-Resistance `175 Operating Temperatur `Fast Switching `Repetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ID @ TC=25 Continuous Drain Curren VGS@ 10V (Silicon Limited) 150 A ID @ TC=100 ...
IRF1405ZL-7P: Features: `Advanced Process Technology `Ultra Low On-Resistance `175 Operating Temperatur `Fast Switching `Repetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Unit...
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Parameter |
Max. |
Units | |
ID @ TC=25 |
Continuous Drain Curren VGS@ 10V (Silicon Limited) |
150 |
A |
ID @ TC=100 |
Continuous Drain Curren VGS@ 10V(See Fig. 9) |
100 | |
ID @ TC=25 |
Continuous Drain Curren VGS@ 10V (Package Limited) | 120 | |
IDM |
Pulsed Drain Current |
590 | |
PD@ TC= 25 |
Maximum Power Dissipatio |
230 |
W |
Linear Derating Factor |
1.5 |
W/ | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy (Thermally Limited) |
250 |
mJ |
EAS(tested) |
Single Pulse Avalanche Energy Tested Value |
810 |
|
IAR |
Avalanche Current |
See Fig.12a,12b,15,16 |
A |
EAR |
Repetitive Avalanche Energy |
mJ | |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 175 |
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) | ||
Mounting torque, 6-32 or M3 screw | 10 lbf`in (1.1N`m) |
Parameter |
Typ |
Max. |
Units | |
RJC RCS RJA RJA |
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB Mount, steady state) |
- 0.50 - - |
0.65 - 62 40 |
/W |
Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of the IRF1405ZL-7P are a 175 junction operatin temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applicaions and a wide variety of other applications.