IRF1405SPBF

MOSFET

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IRF1405SPBF Picture
SeekIC No. : 00148879 Detail

IRF1405SPBF: MOSFET

floor Price/Ceiling Price

US $ .88~1.82 / Piece | Get Latest Price
Part Number:
IRF1405SPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.82
  • $1.24
  • $.92
  • $.88
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/7/15

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 131 A
Resistance Drain-Source RDS (on) : 5.3 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 131 A
Resistance Drain-Source RDS (on) : 5.3 m Ohms


Application

·Electric Power Steering (EPS)
·Anti-lock Braking System (ABS)
·Wiper Control
·Climate Control
·Power Door
·Lead-Free



Specifications

Parameter
Max.
Units
ID @ VGS=-12V,TC=25
Continuous Drain CurrenVGS @ 10V
131
A
ID @ VGS=-12V,TC=100
Continuous Drain Curren VGS @ 10V
93
IDM
Pulsed Drain Current
680
PD@ TC= 25
Power Dissipatio
200
W
Linear Derating Factor
1.3
W/
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
590
mJ
IAR
Avalanche Current
See Fig.12a, 12b, 15, 16
A
EAR
Repetitive Avalanche Energy
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/nS
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to +175
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw
10 lbf`in (1.1N`m)
 



Description

Stripe Planar design of HEXFET®  Power MOSFETs utilizes the lastest processing techniques to achieve extremely low  on-resistance per silicon area.  Additional features of this HEXFET power MOSFET of the IRF1405SPbF are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




Parameters:

Technical/Catalog InformationIRF1405SPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C131A
Rds On (Max) @ Id, Vgs5.3 mOhm @ 101A, 10V
Input Capacitance (Ciss) @ Vds 5480pF @ 25V
Power - Max200W
PackagingTube
Gate Charge (Qg) @ Vgs260nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF1405SPBF
IRF1405SPBF



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