IRF1405S

MOSFET N-CH 55V 131A D2PAK

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IRF1405S Picture
SeekIC No. : 003432902 Detail

IRF1405S: MOSFET N-CH 55V 131A D2PAK

floor Price/Ceiling Price

Part Number:
IRF1405S
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/15

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 55V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 131A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 101A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 260nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 5480pF @ 25V
Power - Max: 200W Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Gate Charge (Qg) @ Vgs: 260nC @ 10V
Drain to Source Voltage (Vdss): 55V
Power - Max: 200W
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 131A
Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 101A, 10V
Input Capacitance (Ciss) @ Vds: 5480pF @ 25V


Features:

`Advanced Process Technology
`Ultra Low On-Resistance
`Dynamic dv/dt Rating
`175 Operating Temperatur
`Fast Switching
`Repetitive Avalanche Allowed up to Tjmax



Application

·Electric Power Steering (EPS)
·Anti-lock Braking System (ABS)
·Wiper Control
·Climate Control
·Power Door



Specifications

  Parameter Max. Units
ID @ TC =25 Continuous Drain Current,VGS @ 10V 131 A
ID @ TC =100 Continuous Drain Current,VGS @ 10V 93
IDM Pulsed Drain Current 680
PD @ TC =25 Power Dissipation 200 W
  Linear Derating Factor 1.3 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 590 mJ
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case)
  Mounting Torque, 6-32 or screw 10 lbf.in (1.1 N.m)  



Description

Stripe Planar design of HEXFET®  Power MOSFETs utilizes the lastest processing techniques to achieve extremely low  on-resistance per silicon area.  Additional features of this HEXFET power MOSFET of the IRF1405S are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




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