MOSFET N-CH 55V 131A D2PAK
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Series: | HEXFET® | Manufacturer: | International Rectifier | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Standard | Drain to Source Voltage (Vdss): | 55V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 131A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 5.3 mOhm @ 101A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 4V @ 250µA | Gate Charge (Qg) @ Vgs: | 260nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 5480pF @ 25V | ||
Power - Max: | 200W | Mounting Type: | Surface Mount | ||
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Supplier Device Package: | D2PAK |
Parameter | Max. | Units | |
ID @ TC =25 | Continuous Drain Current,VGS @ 10V | 131 | A |
ID @ TC =100 | Continuous Drain Current,VGS @ 10V | 93 | |
IDM | Pulsed Drain Current | 680 | |
PD @ TC =25 | Power Dissipation | 200 | W |
Linear Derating Factor | 1.3 | W/ | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy | 590 | mJ |
IAR | Avalanche Current | See Fig.12a, 12b, 15, 16 | A |
EAR | Repetitive Avalanche Energy | mJ | |
dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case) | ||
Mounting Torque, 6-32 or screw | 10 lbf.in (1.1 N.m) |
Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET of the IRF1405S are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.