Position: Home  > All Categories> Integrated Circuits (ICs) > IRF1405L

IRF1405L

MOSFET N-CH 55V 131A TO-262

product image

IRF1405L Picture
See larger image
SeekIC No. : 004376383 Detail

IRF1405L: MOSFET N-CH 55V 131A TO-262

IRF1405L Data Sheet

floor Price/Ceiling Price

US $ 1.64~1.64 / Piece | Get Latest Price
Part Number:
IRF1405L
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~150
  • Unit Price
  • $1.64
  • Processing time
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/14

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

`Advanced Process Technology
`Ultra Low On-Resistance
`Dynamic dv/dt Rating
`175 Operating Temperatur
`Fast Switching
`Repetitive Avalanche Allowed up to Tjmax


Application

·Electric Power Steering (EPS)
·Anti-lock Braking System (ABS)
·Wiper Control
·Climate Control
·Power Door


Specifications

  Parameter Max. Units
ID @ TC =25 Continuous Drain Current,VGS @ 10V 131 A
ID @ TC =100 Continuous Drain Current,VGS @ 10V 93
IDM Pulsed Drain Current 680
PD @ TC =25 Power Dissipation 200 W
  Linear Derating Factor 1.3 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 590 mJ
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case)
  Mounting Torque, 6-32 or screw 10 lbf.in (1.1 N.m)  



Description

Stripe Planar design of HEXFET®  Power MOSFETs utilizes the lastest processing techniques to achieve extremely low  on-resistance per silicon area.  Additional features of this HEXFET power MOSFET of the IRF1405L are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




Parameters:

Technical/Catalog InformationIRF1405L
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C131A
Rds On (Max) @ Id, Vgs5.3 mOhm @ 101A, 10V
Input Capacitance (Ciss) @ Vds 5480pF @ 25V
Power - Max200W
PackagingBulk
Gate Charge (Qg) @ Vgs260nC @ 10V
Package / CaseTO-262-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRF1405L
IRF1405L



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Kits
IT243
UVSC-110-4E1
Switches
US32DMRJ
HBGQ22P-11ET
Prototyping Products
AVT4168
DE1
View more