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IRF1405

MOSFET N-CH 55V 169A TO-220AB

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SeekIC No. : 004376382 Detail

IRF1405: MOSFET N-CH 55V 169A TO-220AB

IRF1405 Data Sheet

floor Price/Ceiling Price

US $ 1.7~1.7 / Piece | Get Latest Price
Part Number:
IRF1405
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~150
  • Unit Price
  • $1.7
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

`Advanced Process Technology
`Ultra Low On-Resistance
`Dynamic dv/dt Rating
`175 Operating Temperatur
`Fast Switching
`Repetitive Avalanche Allowed up to Tjmax


Application

·Electric Power Steering (EPS)
·Anti-lock Braking System (ABS)
·Wiper Control
·Climate Control
·Power Door


Specifications

  Parameter Max. Units
ID @ TC =25 Continuous Drain Current,VGS @ 10V 169 A
ID @ TC =100 Continuous Drain Current,VGS @ 10V 118
IDM Pulsed Drain Current 680
PD @ TC =25 Power Dissipation 330 W
  Linear Derating Factor 2.2 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 560 mJ
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case)
  Mounting Torque, 6-32 or screw 10 lbf.in (1.1 N.m)  



Description

Specifically designed for Automotive applications of the IRF1405, this ? Stripe Planar design of HEXFET Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175!a junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits of the IRF1405 combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




Parameters:

Technical/Catalog InformationIRF1405
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C169A
Rds On (Max) @ Id, Vgs5.3 mOhm @ 101A, 10V
Input Capacitance (Ciss) @ Vds 5480pF @ 25V
Power - Max330W
PackagingBulk
Gate Charge (Qg) @ Vgs260nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRF1405
IRF1405



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