IRF1404S

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 40V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Gate Charge (Qg) @ Vgs: 200nC @ 10V
Manufacturer: International Rectifier
Power - Max: 3.8W
Current - Continuous Drain (Id) @ 25° C: 162A
Rds On (Max) @ Id, Vgs: 4 mOhm @ 95A, 10V
Input Capacitance (Ciss) @ Vds: 7360pF @ 25V


Features:

`Advanced Process Technology
`Ultra Low On-Resistance
`Dynamic dv/dt Rating
`175 Operating Temperatur
`Fast Switching
`Fully Avalanche Rated


Specifications

	Parameter	Max.	Units
ID @ TC =25	Continuous Drain Current,VGS @ 10V	162	A
ID @ TC =100	Continuous Drain Current,VGS @ 10V	115
IDM	Pulsed Drain Current	650
PD @ TC =25	Power Dissipation	3.8	W
PD @ TA =70	Power Dissipation	200	W
	Linear Derating Factor	1.3	W/
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	519	mJ
IAR	Avalanche Current	95	A
EAR	Repetitive Avalanche Energy	20	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175 -55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )

Description

Seventh Generation HEXFET  Power MOSFETs of the IRF1404S from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The IRF1404S is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF1404S) is available for low- profile applications.

Parameters:

Technical/Catalog Information	IRF1404S
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	162A
Rds On (Max) @ Id, Vgs	4 mOhm @ 95A, 10V
Input Capacitance (Ciss) @ Vds	7360pF @ 25V
Power - Max	3.8W
Packaging	Tube
Gate Charge (Qg) @ Vgs	200nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF1404S IRF1404S