IRF1404PBF

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 40 V
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 162 A


Features:

` Advanced Process Technology
` Ultra Low On-Resistance
` Dynamic dv/dt Rating
` 175 Operating Temperature
` Fast Switching
` Fully Avalanche Rated
` Automotive Qualified (Q101)
` Lead-Free




Specifications

	Parameter	Max.	Units
ID @ TC=25	Continuous Drain Current VGS @ 10V	202	A
ID @ TC=100	Continuous Drain Current VGS @ 10V	143
IDM	Pulsed Drain Current	808
PD @ TC = 25	Max. Power Dissipation	333	W
	Linear Derating Factor	2.2	W/
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	620	mJ
IAR	Avalanche Current	See Fig.12a,12b,15,16	A
EAR	Repetitive Avalanche Energy		mJ
dv/dt	Peak Diode Recovery dv/dt	1.5	V/ns
TJ TSTG	Operating Junction Storage Temperature Range	-55 to +175 -55 to +175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting Torque, 6-32 or M3 screw	10lb`in (1.1N`m)

Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Starting T_J = 25, L = 85µH R_G = 25, I_AS = 121A. (See Figure 12)
I_SD 121A, di/dt 130A/µs, V_DD V_(BR)DSS,T_J 175
Pulse width 400µs; duty cycle 2%.
C_oss eff. is a fixed capacitance that gives the same charging time as C_oss while VDS is rising from 0 to 80% V_DSS
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.




Description

Seventh Generation HEXFET^® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs of the IRF1404PbF are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications including automotive.

The IRF1404PbF package is universally preferred for all automotive-commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

The IRF1404PbF is designed as one kind of seventh generation HEXFET power MOSFET that can be used in all automotive-commercial-industrial applications at power dissipation levels to approximately 50 watts.

Features of this IRF1404PbF are:(1)advanced process technology; (2)ultra low on-resistance; (3)dynamic dv/dt rating; (4)175°C operating temperature; (5)fast switching; (6)fully avalanche rated; (7)automotive qualified (Q101); (8)lead-free.

The absolute maximum ratings of the IRF1404PbF can be summarized as:(1)Continuous Drain Current TC = 25°C: 202 A;(2)Continuous Drain Current TC = 100°C: 143 A;(3)Pulsed Drain Current: 808 A;(4)Power Dissipation: 333 W;(5)Linear Derating Factor: 2.2 W/°C;(6)Gate-to-Source Voltage: ±20 V;(7)Single Pulse Avalanche Energy: 620 mJ;(8)Peak Diode Recovery dv/dt: 1.5 V/ns;(9)Operating Junction and Storage Temperature Rang: -55°C to + 175°C;(10)Soldering Temperature, for 10 seconds: 300°C.

The electrical characteristics of this IRF1404PbF can be summarized as:(1)Drain-to-Source Breakdown Voltage: 40 V;(2)Breakdown Voltage Temp. Coefficient: 0.039 V/°C;(3)Static Drain-to-Source On-Resistance: 0.0035 to 0.004 ;(4)Gate Threshold Voltage: 2.0 to 4.0 V;(5)Forward Transconductance: 76 S;(6)Gate-to-Source Forward Leakage: 200 nA;(7)Gate-to-Source Reverse Leakage: -200 nA;(8)Diode Forward Voltage: 1.5 V;(9)Reverse Recovery Time: 78 to 117 ns;(10)Reverse Recovery Charge: 163 to 245 nC. If you want to know more information about the IRF1404PbF, please download the datasheet in www.seekic.com or www.chinaicmart.com .

Parameters:

Technical/Catalog Information	IRF1404PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	202A
Rds On (Max) @ Id, Vgs	4 mOhm @ 121A, 10V
Input Capacitance (Ciss) @ Vds	5669pF @ 25V
Power - Max	333W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	196nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF1404PBF IRF1404PBF