IRF1404

Maximum Operating Temperature :
Mounting Style :
Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Drain-Source Breakdown Voltage : 40 V
Package / Case : TO-220AB
Resistance Drain-Source RDS (on) : 4 mOhms
Continuous Drain Current : 202 A


Features:

`Advanced Process Technology
`Ultra Low On-Resistance
`Dynamic dv/dt Rating
`175  Operating Temperatur
`Fast Switching
`Fully Avalanche Rated


Specifications

	Parameter	Max.	Units
ID @ TC =25	Continuous Drain Current,VGS @ 10V	162	A
ID @ TC =100	Continuous Drain Current,VGS @ 10V	115
IDM	Pulsed Drain Current	650
PD @ TC =100	Power Dissipation	200	W
	Linear Derating Factor	1.3	W/
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	519	mJ
IAR	Avalanche Current	95	A
EAR	Repetitive Avalanche Energy	20	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175 -55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)
	Mounting Torque, 6-32 or screw	10 lbf.in (1.1 N.m)

Description

Seventh Generation HEXFET®  Power MOSFETs of the IRF1404 from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliabledevice for use in a wide variety of applications.

The IRF1404 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Parameters:

Technical/Catalog Information	IRF1404
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	202A
Rds On (Max) @ Id, Vgs	4 mOhm @ 121A, 10V
Input Capacitance (Ciss) @ Vds	5669pF @ 25V
Power - Max	333W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	196nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF1404 IRF1404