Features: `28A, 100V`rDS(ON)= 0.077`Single Pulse Avalanche Energy Rated`SOA is Power-Dissipation Limited`Nanosecond Switching Speeds`Linear Transfer Characteristics`High Input Impedance`Majority Carrier DeviceSpecifications IRF140 UNITS Drain to Source Voltage (Note 1) VDS 100 V ...
IRF140: Features: `28A, 100V`rDS(ON)= 0.077`Single Pulse Avalanche Energy Rated`SOA is Power-Dissipation Limited`Nanosecond Switching Speeds`Linear Transfer Characteristics`High Input Impedance`Majority Car...
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IRF140 | UNITS | ||
Drain to Source Voltage (Note 1) | VDS | 100 | V |
Drain to Gate Voltage (RGS = 20k)(Note 1) |
VDGR | 100 | V |
Continuous Drain Current | ID | 28 | A |
TC = 100 |
ID | 20 | A |
Pulsed Drain Current (Note 3) | IDM | 110 | A |
Gate to Source Voltage. | VGS | ±20 | V |
Maximum Power Dissipation | PD | 150 | W |
Linear Derating Factor | 1.0 | /W | |
Single Pulse Avalanche Energy Rating (Note 4) | EAS | 100 | mJ |
Operating and Storage Temperature | TJ , TSTG | -55 to 175 | |
Maximum Temperature for Soldering | |||
Leads at 0.063in (1.6mm) from case for 10s | TL | 300 | |
Package Body for 10s, see TB334 | Tpkg | 260 |
ThisN-Channelenhancementmodesilicongatepower?eld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speci?ed level of energyinthebreakdownavalanchemodeofoperation.Allof these power MOSFETs of the IRF140 are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type IRF140.