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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 80 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 95 A | ||
Resistance Drain-Source RDS (on) : | 10 m Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Symbol |
Parameter |
Max. |
Units |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V |
95 |
A |
ID @ TC =100 | Continuous Drain Current, VGS @ 10V |
67 | |
IDM | Pulsed Drain Current |
380 | |
PD @TA= 25 | Power Dissipation |
3.8 |
W |
PD @TC= 25 | Power Dissipation |
210 | |
Linear Derating Factor |
1.4 |
W/ | |
VGS | Gate-to-Source Voltage |
± 20 |
V |
dv/dt | Peak Diode Recovery dv/dt |
5.1 |
V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
|
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
Mounting torqe, 6-32 or M3 screw | 10 lbf•in (1.1N•m) |
Technical/Catalog Information | IRF1312PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25° C | 95A |
Rds On (Max) @ Id, Vgs | 10 mOhm @ 57A, 10V |
Input Capacitance (Ciss) @ Vds | 5450pF @ 25V |
Power - Max | 3.8W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 140nC @ 10V |
Package / Case | TO-220-3 (Straight Leads) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRF1312PBF IRF1312PBF |