Position: Home  > All Categories> Integrated Circuits (ICs) > IRF1310S

IRF1310S

Features: `Advanced Process Technology`Ultra Low On-Resistance`Surface Mount`Available in Tape & Reel`Dynamic dv/dt Rating`Repetitive Avalanche Rated`175 Operating TemperaturSpecifications Parameter Max. Units ID @ TC =25 Continuous Drain Current,VGS @ 10V 41 A ID @ TC =100 ...

product image

IRF1310S Picture
See larger image
SeekIC No. : 004376371 Detail

IRF1310S: Features: `Advanced Process Technology`Ultra Low On-Resistance`Surface Mount`Available in Tape & Reel`Dynamic dv/dt Rating`Repetitive Avalanche Rated`175 Operating TemperaturSpecifications ...

IRF1310S Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRF1310S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

`Advanced Process Technology
`Ultra Low On-Resistance
`Surface Mount
`Available in Tape & Reel
`Dynamic dv/dt Rating
`Repetitive Avalanche Rated
`175 Operating Temperatur


Specifications

  Parameter Max. Units
ID @ TC =25 Continuous Drain Current,VGS @ 10V 41 A
ID @ TC =100 Continuous Drain Current,VGS @ 10V 29
IDM Pulsed Drain Current 160
PD @ TC =25 Power Dissipation 170 W
PD @ TC =25 Power Dissipation (PCB Mount)** 3.8
  Linear Derating Factor 1.1 W/
  Linear Derating Factor (PCB Mount)** 0.025
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 230 mJ
IAR Avalanche Current 41 A
EAR Repetitive Avalanche Energy 17 mJ
dv/dt Peak Diode Recovery dv/dt 5.5 V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case)



Description

Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs of the IRF1310S are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The IRF1310S is a surface mount power package capable of accommodating die sizes up to HEX-4.  It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.  The IRF1310S is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Power Supplies - External/Internal (Off-Board)
A76L-0300-0077
A5E01231722-F2
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Undefined Category
VI-B63-IU
X27 589
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
View more