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IRF1310S

Features: `Advanced Process Technology`Ultra Low On-Resistance`Surface Mount`Available in Tape & Reel`Dynamic dv/dt Rating`Repetitive Avalanche Rated`175 Operating TemperaturSpecifications Parameter Max. Units ID @ TC =25 Continuous Drain Current,VGS @ 10V 41 A ID @ TC =100 ...

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IRF1310S: Features: `Advanced Process Technology`Ultra Low On-Resistance`Surface Mount`Available in Tape & Reel`Dynamic dv/dt Rating`Repetitive Avalanche Rated`175 Operating TemperaturSpecifications ...

IRF1310S Data Sheet

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Part Number:
IRF1310S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

`Advanced Process Technology
`Ultra Low On-Resistance
`Surface Mount
`Available in Tape & Reel
`Dynamic dv/dt Rating
`Repetitive Avalanche Rated
`175 Operating Temperatur


Specifications

  Parameter Max. Units
ID @ TC =25 Continuous Drain Current,VGS @ 10V 41 A
ID @ TC =100 Continuous Drain Current,VGS @ 10V 29
IDM Pulsed Drain Current 160
PD @ TC =25 Power Dissipation 170 W
PD @ TC =25 Power Dissipation (PCB Mount)** 3.8
  Linear Derating Factor 1.1 W/
  Linear Derating Factor (PCB Mount)** 0.025
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 230 mJ
IAR Avalanche Current 41 A
EAR Repetitive Avalanche Energy 17 mJ
dv/dt Peak Diode Recovery dv/dt 5.5 V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case)



Description

Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs of the IRF1310S are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The IRF1310S is a surface mount power package capable of accommodating die sizes up to HEX-4.  It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.  The IRF1310S is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.




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