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IRF1310NS

MOSFET N-CH 100V 42A D2PAK

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SeekIC No. : 004376369 Detail

IRF1310NS: MOSFET N-CH 100V 42A D2PAK

IRF1310NS Data Sheet

floor Price/Ceiling Price

US $ 1.07~1.07 / Piece | Get Latest Price
Part Number:
IRF1310NS
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~250
  • Unit Price
  • $1.07
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Description



Features:

`Advanced Process Technology
`Surface Mount (IRF1310NS)
`Low-profile through-hole (IRF1310NL)
`175 Operating Temperatur
`Fast Switching
`Fully Avalanche Rated


Specifications

  Parameter Max. Units
ID @ TC =25 Continuous Drain Current,VGS @ 10V 42 A
ID @ TC =100 Continuous Drain Current,VGS @ 10V 30
IDM Pulsed Drain Current 140
PD @ TA =25 Power Dissipation 3.8 W
PD @ TC =25 Power Dissipation 160 W
  Linear Derating Factor 1.1 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 420 mJ
IAR Avalanche Current 22 A
EAR Repetitive Avalanche Energy 16 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case)



Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak of the IRF1310NS is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The IRF1310NS is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF1310NS) is available for low- profile applications.




Parameters:

Technical/Catalog InformationIRF1310NS
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C42A
Rds On (Max) @ Id, Vgs36 mOhm @ 22A, 10V
Input Capacitance (Ciss) @ Vds 1900pF @ 25V
Power - Max3.8W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs110nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRF1310NS
IRF1310NS



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