IRF1310NPBF

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 42 A
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : 20 V


Description

IRF1310NPbF is a kind of power MOSFET which utilize advanced processing technology to achieve extremely low on-resistance per silicon area.Another notabe benefits is the fast switching speed and ruggedized device design.The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.The low thermal resistance of IRF1310NPbF and low package cost of the TO-220 controbute to IRF1310NPbF wide acceptance throughout the industry.
The following is about the absolute maximum ratings of IRF1310NPbF.The maximum I_D (continuous drain current) is 42 A at T_C=25 and V_GS=10 V and 30 A at T_C=100 and V_GS=3.9 V.The maximum I_DM (Pulsed drain current) is 140 A.The maximum V_GS (gate-to-source voltage) is ±20 V.The maximum P_D (power dissipation) is 160 W at T_C=25.The T_J and T_STG (operating junction and storage temperature range) are both from -55 to +175.The soldering temperature for 10 seconds is 300.The maximum dv/dt (peak diode recovery dv/dt) is 5.0 V/ns.The maximum linear derating factor is 1.1 W/.The maximum E_AS (single pulse avalanche energy) is 420 mJ.The maximum I_AR (avalanche current) is 22 A.The maximum E_AR (repetitive avalanche energy) is 16 mJ.Then is about the thermal resistance.The maximum R_JC (Junction-to-Case) is 0.95/W.The maximum R_JA (Junction-to-Ambient) is 62/W.The typical R_CS (Case-to-Sink,Flat,Greased Surface) is 0.5/W.
What comes next is about the electrical characteristics of IRF1310NPbF at T_J=25.The minimum V_(BR)DSS (drain-to-source breakdown voltage) is 100 V at V_GS=0 V,I_D=250A.The typical V_(BR)DSS/T_J (breakdown voltage temperature coefficient) is 0.11 V/ at T_J=25 and I_D=1mA.The maximum R_DS(on) (static drain-to-source on resistance) is 0.036 at V_GS=10 V,I_D=22 A.The V_GS(th) (gate threshold voltage) is 2.0 V and the maximum is 4.0 V at V_DS=V_GS,I_D=250A.The maximum I_DSS (drain-to-source leakage current) is 25A at V_DS=100 V,V_GS=0 V and is 250A at V_DS=80 V,V_GS=0 V,T_J=150.The maximum (I_GSS) (gate-to-source forward leakage) is 100 nA at V_GS=20 V and the maximum (I_GSS) (gate-to-source reverse leakage) is -100 nA at V_GS=-20 V.

The IRF1310NPBF is designed as one kind of HEXFET Power MOSFET device that has some points of features:(1)advanced process technology; (2)ultra low on-resistance; (3)dynamic dv/dt rating; (4)175°C operating temperature; (5)fast switching; (6)fully avalanche rated; (7)lead-free. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

The absolute maximum ratings of the IRF1310NPBF can be summarized as:(1)Continuous Drain Current, VGS @ 10V TC = 25°C: 42 A;(2)Continuous Drain Current, VGS @ 10V TC = 100°C: 30 A;(3)Pulsed Drain Current IDM: 140 A;(4)Power Dissipation: 160 W;(5)Linear Derating Factor: 1.1 W/°C;(6)Gate-to-Source Voltage: ±20 V;(7)Avalanche Current: 22 A;(8)Repetitive Avalanche Energy: 16 mJ;(9)Peak Diode Recovery dv/dt: 5.0 V/ns;(10)Operating Junction and Storage Temperature Range: -55 to +175 ;(11)Soldering Temperature, for 10 seconds: 300 (1.6mm from case ) . If you want to know more information about the IRF1310NPBF, please download the datasheet in www.seekic.com or www.chinaicmart.com .

Parameters:

Technical/Catalog Information	IRF1310NPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	42A
Rds On (Max) @ Id, Vgs	36 mOhm @ 22A, 10V
Input Capacitance (Ciss) @ Vds	1900pF @ 25V
Power - Max	3.8W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	110nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF1310NPBF IRF1310NPBF