IRF1302S

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Gate Charge (Qg) @ Vgs: 120nC @ 10V
Input Capacitance (Ciss) @ Vds: 3600pF @ 25V
Power - Max: 200W
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 174A
Rds On (Max) @ Id, Vgs: 4 mOhm @ 104A, 10V


Features:

`Advanced Process Technology
`Ultra Low On-Resistance
`Dynamic dv/dt Rating
`175 Operating Temperatur
`Fast Switching
`Repetitive Avalanche Allowed up to Tjmax


Specifications

	Parameter	Max.	Units
ID @ TC =25	Continuous Drain Current,VGS @ 10V	174	A
ID @ TC =100	Continuous Drain Current,VGS @ 10V	120
IDM	Pulsed Drain Current	700
PD @ TC =25	Power Dissipation	200	W
	Linear Derating Factor	1.4	W/
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	350	mJ
IAR	Avalanche Current	See Fig.12a, 12b, 15, 16	A
EAR	Repetitive Avalanche Energy		mJ
dv/dt	Peak Diode Recovery dv/dt	TBD	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)

Description

Specifically designed for Automotive applications of the IRF1302S, this Stripe Planar  design of HEXFET Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of the IRF1302S are a 175 junction operatin temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Parameters:

Technical/Catalog Information	IRF1302S
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	174A
Rds On (Max) @ Id, Vgs	4 mOhm @ 104A, 10V
Input Capacitance (Ciss) @ Vds	3600pF @ 25V
Power - Max	200W
Packaging	Tube
Gate Charge (Qg) @ Vgs	120nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF1302S IRF1302S