Position: Home  > All Categories> Integrated Circuits (ICs) > IRF1302PbF

IRF1302PbF

MOSFET N-CH 20V 180A TO-220AB

product image

IRF1302PbF Picture
See larger image
SeekIC No. : 004376365 Detail

IRF1302PbF: MOSFET N-CH 20V 180A TO-220AB

IRF1302PbF Data Sheet

floor Price/Ceiling Price

US $ .71~1.23 / Piece | Get Latest Price
Part Number:
IRF1302PbF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~10
  • 10~100
  • 100~250
  • 250~500
  • 500~1000
  • 1000~2500
  • 2500~10000
  • Unit Price
  • $1.23
  • $.94
  • $.89
  • $.84
  • $.8
  • $.77
  • $.71
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/24

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· Advanced Process Technology
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· Repetitive Avalanche Allowed up to Tjmax
· Lead-Free


Specifications

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 180 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 130
IDM Pulsed Drain Current 700
PD @TC = 25°C Power Dissipation 230 W
  Linear Derating Factor 1.5 W/°C
VGS Diode Maximum Forward Current ± 20 V
EAS Single Pulse Avalanche Energy 350 mJ
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy mJ
dv/dt Peak Diode Recovery dv/dt TBD V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )



Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits of the IRF1302PbF combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




Parameters:

Technical/Catalog InformationIRF1302PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C180A
Rds On (Max) @ Id, Vgs4 mOhm @ 104A, 10V
Input Capacitance (Ciss) @ Vds 3600pF @ 25V
Power - Max230W
PackagingTube
Gate Charge (Qg) @ Vgs120nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF1302PBF
IRF1302PBF



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Optical Inspection Equipment
AA924
A21K4B
Prototyping Products
AVT4168
DE1
Undefined Category
VI-B63-IU
X27 589
Optoelectronics
SFH7770
TLP423J
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
View more