MOSFET N-CH 20V 180A TO-220AB
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Parameter | Max. | Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 180 | A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 130 | |
IDM | Pulsed Drain Current | 700 | |
PD @TC = 25°C | Power Dissipation | 230 | W |
Linear Derating Factor | 1.5 | W/°C | |
VGS | Diode Maximum Forward Current | ± 20 | V |
EAS | Single Pulse Avalanche Energy | 350 | mJ |
IAR | Avalanche Current | See Fig.12a, 12b, 15, 16 | A |
EAR | Repetitive Avalanche Energy | mJ | |
dv/dt | Peak Diode Recovery dv/dt | TBD | V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | °C |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits of the IRF1302PbF combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Technical/Catalog Information | IRF1302PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 180A |
Rds On (Max) @ Id, Vgs | 4 mOhm @ 104A, 10V |
Input Capacitance (Ciss) @ Vds | 3600pF @ 25V |
Power - Max | 230W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 120nC @ 10V |
Package / Case | TO-220-3 (Straight Leads) |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRF1302PBF IRF1302PBF |