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IRF1302

Features: `Advanced Process Technology`Ultra Low On-Resistance`Dynamic dv/dt Rating`175 Operating Temperatur`Fast Switching`Repetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ID @ TC =25 Continuous Drain Current,VGS @ 10V 180 A ID @ TC =100 Continuous Dr...

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SeekIC No. : 004376363 Detail

IRF1302: Features: `Advanced Process Technology`Ultra Low On-Resistance`Dynamic dv/dt Rating`175 Operating Temperatur`Fast Switching`Repetitive Avalanche Allowed up to TjmaxSpecifications Parameter M...

IRF1302 Data Sheet

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Part Number:
IRF1302
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

`Advanced Process Technology
`Ultra Low On-Resistance
`Dynamic dv/dt Rating
`175 Operating Temperatur
`Fast Switching
`Repetitive Avalanche Allowed up to Tjmax


Specifications

  Parameter Max. Units
ID @ TC =25 Continuous Drain Current,VGS @ 10V 180 A
ID @ TC =100 Continuous Drain Current,VGS @ 10V 130
IDM Pulsed Drain Current 700
PD @ TC =25 Power Dissipation 230 W
  Linear Derating Factor 1.5 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 350 mJ
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy mJ
dv/dt Peak Diode Recovery dv/dt TBD V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case)



Description

Specifically designed for Automotive applications IRF1302, this Stripe Planar design of HEXFET Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of IRF1302 are a 175 junction operatin temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




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