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IRF123

Features: `8.0A and 9.2A, 80V and 100V`rDS(ON)= 0.27and 0.36`SOA is Power Dissipation Limited`Nanosecond Switching Speeds`Linear Transfer Characteristics`High Input Impedance`Majority Carrier Device`Related Literature-TB334 Guidelines for Soldering Surface MounComponents to PC Boards Specification...

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SeekIC No. : 004376361 Detail

IRF123: Features: `8.0A and 9.2A, 80V and 100V`rDS(ON)= 0.27and 0.36`SOA is Power Dissipation Limited`Nanosecond Switching Speeds`Linear Transfer Characteristics`High Input Impedance`Majority Carrier Device...

IRF123 Data Sheet

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Part Number:
IRF123
Supply Ability:
5000

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Product Details

Description



Features:

`8.0A and 9.2A, 80V and 100V
`rDS(ON)= 0.27and 0.36
`SOA is Power Dissipation Limited
`Nanosecond Switching Speeds
`Linear Transfer Characteristics
`High Input Impedance
`Majority Carrier Device
`Related Literature
-TB334  Guidelines for Soldering Surface Moun
Components to PC Boards


Specifications

    IRF120

IRF121

 IR122 IRF33 UNITS
Drain to Source Voltage (Note 1) VDS 100 80 100 80 V
Drain to Gate Voltage (RGS = 20k)(Note 1)
 VDGR 100 80 100 80 V
Continuous Drain Current ID 9.2 9.2 8.0 8.0 A
TC = 100
 ID 6.5 6.5 5.6 5.6 A
Pulsed Drain Current (Note 3) IDM 37 37 32 32 A
Gate to Source Voltage. VGS ±20 ±20 ±20 ±20 V
Maximum Power Dissipation PD 60 60 60 60 W
Linear Derating Factor   0.4

0.4

 0.4 0.4 W/
Single Pulse Avalanche Energy Rating (Note 4) EAS 36 36 36 36 mJ
Operating and Storage Temperature TJ , TSTG -55 to 150 -55 to 150 -55 to 150 -55 to 150
Maximum Temperature for Soldering            
Leads at 0.063in (1.6mm) from case for 10s TL 300 300 300 300
Package Body for 10s, see TB334 Tpkg 260 260 260 260



Description

These are N-Channel enhancement mode silicon gate power ?eld effect transistors. IRF123 are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci?ed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs IRF123 are designed for applications such as switching regulators, switching conver- tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Formerly developmental type TA09594.




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