IRF1205

Features: ·Advanced Process Technology·Dynamic dv/dt Rating·175 °C Operating Temprature·Fast Switching·Fully Avalanche RatedSpecifications Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 41 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 29 ...

product image

IRF1205 Picture
SeekIC No. : 004376358 Detail

IRF1205: Features: ·Advanced Process Technology·Dynamic dv/dt Rating·175 °C Operating Temprature·Fast Switching·Fully Avalanche RatedSpecifications Parameter Units ID @ TC = 25°C Continuous D...

floor Price/Ceiling Price

Part Number:
IRF1205
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·Advanced Process Technology
·Dynamic dv/dt Rating
·175 °C Operating Temprature
·Fast Switching
·Fully Avalanche Rated



Specifications

Parameter Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
41
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
29
IDM
Pulsed Drain Current
164
PD @ TC = 25°C
Power Dissipation
83
W
Linear Derating Factor
0.56
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
190
mJ
IAR
Avalanche Current
25
A
EAR
Repetitive Avalanche Energy
8.3
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
g



Description

Fifth Generation MOSFETs of the IRF1205 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The TO-220 package of the IRF1205 is universely preferred for all commercial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Cables, Wires - Management
Audio Products
Test Equipment
Inductors, Coils, Chokes
View more