Transistor Polarity
: N-Channel
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: Through Hole
Drain-Source Breakdown Voltage
: 40 V
Packaging
: Tube
Package / Case
: TO-220AB
Continuous Drain Current
: 100 A
Gate-Source Breakdown Voltage
: 20 V
Resistance Drain-Source RDS (on)
: 9 mOhms
Features: ` Advanced Process Technology
` Ultra Low On-Resistance
` Dynamic dv/dt Rating
` 175 Operating Temperature
` Fast Switching
` Fully Avalanche Rated
` Lead-FreeSpecifications
|
|
Parameter |
Max. |
Units |
|
ID @ TC = 25 |
Continuous Drain Current VGS@ 10V |
100 |
A |
|
ID @ TC = 100 |
Continuous Drain Current, VGS@10V |
71 |
|
IDM |
Pulsed Drain Current |
400 |
|
PD @ TC = 25 |
Power Dissipation |
170 |
W |
|
|
Linear Derating Factor |
1.11 |
W/ |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
EAS |
Single Pulse Avalanche Energy |
350 |
mJ |
|
IAR |
Avalanche Current |
60 |
A |
|
EAR |
Repetitive Avalanche Energy |
17 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
|
TJ
TSTG |
Operating Junction
Storage Temperature Range |
-55 to + 175 |
|
|
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
|
|
Mounting Torque, 6-32 or M3 screw |
10 lbfin (1.1Nm) |
|
DescriptionFifth Generation HEXFETs of the IRF1104PbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The IRF1104PbF package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Parameters: | Technical/Catalog Information | IRF1104PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 100A |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 60A, 10V |
| Input Capacitance (Ciss) @ Vds | 2900pF @ 25V |
| Power - Max | 170W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 93nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF1104PBF
IRF1104PBF
|
IRF1104PBF Data Sheet
