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IRF1104LPbF

MOSFET N-CH 40V 100A TO-262

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SeekIC No. : 004376353 Detail

IRF1104LPbF: MOSFET N-CH 40V 100A TO-262

IRF1104LPbF Data Sheet

floor Price/Ceiling Price

US $ .39~.68 / Piece | Get Latest Price
Part Number:
IRF1104LPbF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~10
  • 10~100
  • 100~250
  • 250~500
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  • 1000~2500
  • 2500~10000
  • Unit Price
  • $.68
  • $.52
  • $.49
  • $.46
  • $.44
  • $.42
  • $.39
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Description



Features:

` Advanced Process Technology
` Ultra Low On-Resistance
` Surface Mount (IRF1104S)
` Low-profile through-hole (IRF1104L)
` 175 Operating Temperature
` Fast Switching
` Fully Avalanche Rated
` Lead-Free


Specifications

Parameter Max. Units
ID @ TC =25 Continuous Drain Current,VGS @ 10V 100 A
ID @ TC =100 Continuous Drain Current,VGS @ 10V 71
IDM Pulsed Drain Current 400
PD @ TA =25 Power Dissipation 2.4 W
PD @ TC =25 Power Dissipation 170 W
Linear Derating Factor 1.1 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 350 mJ
IAR Avalanche Current 60 A
EAR Repetitive Avalanche Energy 17 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175
Soldering Temperature, for 10 seconds 300 (1.6mm from case )



Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design thatHEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The IRF1104LPbF is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF1104LPbF) is available for lowprofile applications.




Parameters:

Technical/Catalog InformationIRF1104LPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25° C100A
Rds On (Max) @ Id, Vgs9 mOhm @ 60A, 10V
Input Capacitance (Ciss) @ Vds 2900pF @ 25V
Power - Max2.4W
PackagingTube
Gate Charge (Qg) @ Vgs93nC @ 10V
Package / CaseTO-262-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF1104LPBF
IRF1104LPBF



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