FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.4W
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 100A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Input Capacitance (Ciss) @ Vds: 2900pF @ 25V
Manufacturer: International Rectifier
Gate Charge (Qg) @ Vgs: 93nC @ 10V
Supplier Device Package: TO-262
Rds On (Max) @ Id, Vgs: 9 mOhm @ 60A, 10V
Features: ` Advanced Process Technology
` Ultra Low On-Resistance
` Surface Mount (IRF1104S)
` Low-profile through-hole (IRF1104L)
` 175 Operating Temperature
` Fast Switching
` Fully Avalanche RatedSpecifications
|
Parameter |
Max. |
Units |
| ID @ TC =25 |
Continuous Drain Current,VGS @ 10V |
100 |
A |
| ID @ TC =100 |
Continuous Drain Current,VGS @ 10V |
71 |
| IDM |
Pulsed Drain Current |
400 |
| PD @ TA =25 |
Power Dissipation |
2.4 |
W |
| PD @ TC =25 |
Power Dissipation |
170 |
W |
|
Linear Derating Factor |
1.1 |
W/ |
| VGS |
Gate-to-Source Voltage |
±20 |
V |
| EAS |
Single Pulse Avalanche Energy |
350 |
mJ |
| IAR |
Avalanche Current |
60 |
A |
| EAR |
Repetitive Avalanche Energy |
17 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
TJ
TSTG |
Operating Junction and
Storage Temperature Range |
-55 to + 175 |
|
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
DescriptionFifth Generation HEXFETs of the IRF1104L from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The IRF1104L is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF1104L) is available for lowprofile applications.
IRF1104L Data Sheet
