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IRF1104

MOSFET N-CH 40V 100A TO-220AB

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SeekIC No. : 004376352 Detail

IRF1104: MOSFET N-CH 40V 100A TO-220AB

IRF1104 Data Sheet

floor Price/Ceiling Price

US $ 1.11~1.11 / Piece | Get Latest Price
Part Number:
IRF1104
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~250
  • Unit Price
  • $1.11
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/9/16

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Product Details

Description



Features:

`Advanced Process Technology
`Ultra Low On-Resistance
`Dynamic dv/dt Rating
`175 Operating Temperatur
`Fast Switching
`Fully Avalanche Rated


Specifications

  Parameter Max. Units
ID @ TC =25 Continuous Drain Current,VGS @ 10V 100 A
ID @ TC =100 Continuous Drain Current,VGS @ 10V 71
IDM Pulsed Drain Current 400
PD @ TC =100 Power Dissipation 170 W
  Linear Derating Factor 1.11 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 350 mJ
IAR Avalanche Current 60 A
EAR Repetitive Avalanche Energy 17 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case)
  Mounting Torque, 6-32 or screw 10 lbf.in (1.1 N.m)  



Description

Fifth Generation HEXFETs of the IRF1104 from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The IRF1104 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.




Parameters:

Technical/Catalog InformationIRF1104
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25° C100A
Rds On (Max) @ Id, Vgs9 mOhm @ 60A, 1V
Input Capacitance (Ciss) @ Vds 2900pF @ 25V
Power - Max170W
PackagingBulk
Gate Charge (Qg) @ Vgs93nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRF1104
IRF1104



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