FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 95nC @ 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25° C: 75A
Manufacturer: International Rectifier
Power - Max: 140W
Input Capacitance (Ciss) @ Vds: 2840pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 75A, 10V
Features: `Advanced Process Technology
`Ultra Low On-Resistance
`175 Operating Temperature
`Fast Switching
`Repetitive Avalanche Allowed up to TjmaxSpecifications
| |
Parameter |
Max. |
Units |
| ID @ TC = 25 |
Continuous Drain Current, VGS @ 10V (Silicon Limited) |
94 |
A |
| ID @ TC = 100 |
Continuous Drain Current, VGS @ 10V |
66 |
| ID @ TC = 25 |
Continuous Drain Current, VGS @ 10V (Package Limited) |
75 |
| IDM |
Pulsed Drain Current |
360 |
| ID @ TC = 25 |
Power Dissipation |
140 |
A |
| |
Linear Derating Factor |
0.90 |
W/ |
| VGS |
Gate-to-Source Voltage |
±20 |
V |
| EAS(Thermally limited) |
Single Pulse Avalanche Energy (Thermally Limited) |
130 |
mJ |
| EAS (Tested ) |
Single Pulse Avalanche Energy Tested Value |
180 |
| IAR |
Avalanche Current |
See Fig.12a, 12b, 15, 16 |
A |
| EAR |
Repetitive Avalanche Energy |
mJ |
TJ
TSTG |
Operating Junction and
Storage Temperature Range |
-55 to + 175 |
|
| |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
| |
Mounting Torque, 6-32 or M3 screw |
10 lbfin (1.1Nm) |
|
DescriptionSpecifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature of the IRF1010ZS, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
IRF1010ZS Data Sheet
