IRF1010ZPBF

MOSFET MOSFT 55V 94A 7.5mOhm 63nC

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SeekIC No. : 00148362 Detail

IRF1010ZPBF: MOSFET MOSFT 55V 94A 7.5mOhm 63nC

floor Price/Ceiling Price

US $ .68~.84 / Piece | Get Latest Price
Part Number:
IRF1010ZPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.84
  • $.75
  • $.72
  • $.68
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 94 A
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 94 A


Features:

Advanced Process Technology
Ultra Low On-Resistance
175 Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
 Lead-Free



Specifications

  Parameter
Max.
Units
ID @TC = 25
Continuous Drain Current, VGS @ 10V (Silicon Limited)
94
A
ID @,TC = 100
Continuous Drain Current, VGS @ 10V
66
ID @ TC = 25
Continuous Drain Current, VGS @ 10V (Package Limited)
75
IDM
Pulsed Drain Current
360
PD @TC = 25
Power Dissipation
140
W
Linear Derating Factor
0.90
W/
VGS
Gate-to-Source Voltage
± 20
V
EAS (Thermally limited)
Single Pulse Avalanche Energy
130
mJ
EAS (Tested )
Single Pulse Avalanche Energy Tested Value
180
IAR
Avalanche Current􀀀
See Fig.12a, 12b, 15, 16
A
EAR
Repetitive Avalanche Energy
mJ
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
  Mounting Torque, 6-32 or M3 screw
10 lbfin (1.1Nm)



Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of the IRF1010ZPbF combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




Parameters:

Technical/Catalog InformationIRF1010ZPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C75A
Rds On (Max) @ Id, Vgs7.5 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds 2840pF @ 25V
Power - Max140W
PackagingTube
Gate Charge (Qg) @ Vgs95nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF1010ZPBF
IRF1010ZPBF



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