MOSFET N-CH 55V 75A TO-220AB
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Series: | HEXFET® | Manufacturer: | International Rectifier | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Standard | Drain to Source Voltage (Vdss): | 55V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 75A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 75A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 4V @ 250µA | Gate Charge (Qg) @ Vgs: | 95nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 2840pF @ 25V | ||
Power - Max: | 140W | Mounting Type: | Through Hole | ||
Package / Case: | TO-220-3 | Supplier Device Package: | TO-220AB |
Parameter | Max. | Units | |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 94 | A |
ID @ TC = 100 | Continuous Drain Current, VGS @ 10V | 66 | |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Package Limited) | 75 | |
IDM | Pulsed Drain Current | 360 | |
ID @ TC = 25 | Power Dissipation | 140 | A |
Linear Derating Factor | 0.90 | W/ | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS(Thermally limited) | Single Pulse Avalanche Energy (Thermally Limited) | 130 | mJ |
EAS (Tested ) | Single Pulse Avalanche Energy Tested Value | 180 | |
IAR | Avalanche Current | See Fig.12a, 12b, 15, 16 | A |
EAR | Repetitive Avalanche Energy | mJ | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
Mounting Torque, 6-32 or M3 screw | 10 lbfin (1.1Nm) |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design of the IRF1010Z are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of the IRF1010Z combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.