IRF1010Z

MOSFET N-CH 55V 75A TO-220AB

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IRF1010Z Picture
SeekIC No. : 003433458 Detail

IRF1010Z: MOSFET N-CH 55V 75A TO-220AB

floor Price/Ceiling Price

US $ 1.04~1.04 / Piece | Get Latest Price
Part Number:
IRF1010Z
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~250
  • Unit Price
  • $1.04
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 55V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 75A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 75A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 95nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2840pF @ 25V
Power - Max: 140W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: TO-220AB    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 95nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25° C: 75A
Manufacturer: International Rectifier
Power - Max: 140W
Input Capacitance (Ciss) @ Vds: 2840pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 75A, 10V


Features:

`Advanced Process Technology
`Ultra Low On-Resistance
`175 Operating Temperature
`Fast Switching
`Repetitive Avalanche Allowed up to Tjmax



Specifications

  Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Silicon Limited) 94 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V 66
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Package Limited) 75
IDM Pulsed Drain Current 360
ID @ TC = 25 Power Dissipation 140 A
  Linear Derating Factor 0.90 W/
VGS Gate-to-Source Voltage ±20 V
EAS(Thermally limited) Single Pulse Avalanche Energy (Thermally Limited) 130 mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value 180
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy mJ
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting Torque, 6-32 or M3 screw 10 lbfin (1.1Nm)  



Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design of the IRF1010Z are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of the IRF1010Z combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




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