IRF1010NSPBF

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 84 A
Resistance Drain-Source RDS (on) : 11 m Ohms


Features:

· Advanced Process Technology
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated
· Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10	85	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	60	A
IDM	Pulsed Drain Current	290	A
PD @TC = 25°C	Power Dissipation	180	W
	Linear Derating Factor	1.2	W/°C
VGS	Gate-to-Source Voltage	± 20	V
IAR	Avalanche Current	43	A
EAR	Repetitive Avalanche Energy	18	mJ
dv/dt	Peak Diode Recovery dv/dt	3.6	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )	°C
	Mounting torque, 6-32 or M3 srew	10 lbf•in (1.1N•m)

Description

Advanced HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak of the IRF1010NSPbF is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF1010NSPbF) is available for lowprofile applications.

Parameters:

Technical/Catalog Information	IRF1010NSPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	85A
Rds On (Max) @ Id, Vgs	11 mOhm @ 43A, 10V
Input Capacitance (Ciss) @ Vds	3210pF @ 25V
Power - Max	180W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	120nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF1010NSPBF IRF1010NSPBF