Resistance Drain-Source RDS (on)
:
Configuration
:
Maximum Operating Temperature
:
Transistor Polarity
: N-Channel
Mounting Style
: Through Hole
Packaging
: Tube
Package / Case
: TO-220AB
Gate-Source Breakdown Voltage
: 20 V
Drain-Source Breakdown Voltage
: 55 V
Continuous Drain Current
: 72 A
Features: · Advanced Process Technology
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated
· Lead-FreeSpecifications
| Parameter |
Symbol |
Rating |
Unit |
| Continuous Drain Current, VGS @ -10V,Tc = 25 |
ID |
85 |
A |
| Continuous Drain Current, VGS @ -10V,Tc = 100 |
ID |
60 |
A |
| Pulsed Drain Current*1 |
IDM |
290 |
A |
| Power Dissipation Tc = 25 |
PD |
180 |
W |
| Linear Derating Factor |
|
1.2 |
/W |
| Gate-to-Source Voltage |
VGS |
±20 |
V |
| Avalanche Current *1 |
IAR |
43 |
A |
| Repetitive Avalanche Energy |
EAR |
18 |
mJ |
| Peak Diode Recovery dv/dt *2 |
dv/dt |
3.6 |
V/ns |
| Operating Junction and Storage Temperature Range |
TJ,TSTG |
-55 to + 175 |
|
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
|
| Mounting torque, 6-32 or M3 srew |
10 lbf.in (1.1N.m) |
|
DescriptionAdvanced HEXFET® Power MOSFETs of the IRF1010NPbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package of the IRF1010NPbF is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Parameters: | Technical/Catalog Information | IRF1010NPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 85A |
| Rds On (Max) @ Id, Vgs | 11 mOhm @ 43A, 10V |
| Input Capacitance (Ciss) @ Vds | 3210pF @ 25V |
| Power - Max | 180W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 120nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF1010NPBF
IRF1010NPBF
|
IRF1010NPBF Data Sheet
