IRF1010NLPBF

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Power - Max: 180W
Gate Charge (Qg) @ Vgs: 120nC @ 10V
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Supplier Device Package: TO-262
Current - Continuous Drain (Id) @ 25° C: 85A
Rds On (Max) @ Id, Vgs: 11 mOhm @ 43A, 10V
Input Capacitance (Ciss) @ Vds: 3210pF @ 25V


Parameters:

Technical/Catalog Information	IRF1010NLPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	85A
Rds On (Max) @ Id, Vgs	11 mOhm @ 43A, 10V
Input Capacitance (Ciss) @ Vds	3210pF @ 25V
Power - Max	180W
Packaging	Tube
Gate Charge (Qg) @ Vgs	120nC @ 10V
Package / Case	TO-262-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF1010NLPBF IRF1010NLPBF