IRF1010N

Maximum Operating Temperature :
Mounting Style :
Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 11 mOhms
Continuous Drain Current : 85 A


Features:

`Advanced Process Technology
`Ultra Low On-Resistance
`Dynamic dv/dt Rating
`175 Operating Temperatur
`Fast Switching
`Fully Avalanche Rated


Specifications

	Parameter	Max.	Units
ID @ TC =25	Continuous Drain Current,VGS @ 10V	85	A
ID @ TC =100	Continuous Drain Current,VGS @ 10V	60
IDM	Pulsed Drain Current	290
PD @ TC =25	Power Dissipation	180	W
	Linear Derating Factor	1.2	W/
VGS	Gate-to-Source Voltage	±20	V
IAR	Avalanche Current	43	A
EAR	Repetitive Avalanche Energy	18	mJ
dv/dt	Peak Diode Recovery dv/dt	3.6	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)
	Mounting Torque, 6-32 or screw	10 lbf.in (1.1 N.m)

Description

Power MOSFETs of the IRF1010N from International Advanced HEXFET Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package of the IRF1010N is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Parameters:

Technical/Catalog Information	IRF1010N
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	85A
Rds On (Max) @ Id, Vgs	11 mOhm @ 43A, 10V
Input Capacitance (Ciss) @ Vds	3210pF @ 25V
Power - Max	180W
Packaging	Tube
Gate Charge (Qg) @ Vgs	120nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF1010N IRF1010N