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IRF1010EZS

MOSFET N-CH 60V 75A D2PAK

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SeekIC No. : 003431015 Detail

IRF1010EZS: MOSFET N-CH 60V 75A D2PAK

IRF1010EZS Data Sheet

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US $ 1.05~1.05 / Piece | Get Latest Price
Part Number:
IRF1010EZS
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~250
  • Unit Price
  • $1.05
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/9/16

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 60V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 75A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 51A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) @ Vgs: 86nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2810pF @ 25V
Power - Max: 140W Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Series: HEXFET®
Packaging: TubeAlternate Packaging
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Input Capacitance (Ciss) @ Vds: 2810pF @ 25V
Gate Charge (Qg) @ Vgs: 86nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 75A
Manufacturer: International Rectifier
Vgs(th) (Max) @ Id: 4V @ 100µA
Power - Max: 140W
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 51A, 10V


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