IRF1010ESTRR

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 130nC @ 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Power - Max: 200W
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 84A
Input Capacitance (Ciss) @ Vds: 3210pF @ 25V
Rds On (Max) @ Id, Vgs: 12 mOhm @ 50A, 10V


Parameters:

Technical/Catalog Information	IRF1010ESTRR
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	84A
Rds On (Max) @ Id, Vgs	12 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds	3210pF @ 25V
Power - Max	200W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	130nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF1010ESTRR IRF1010ESTRR