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IRF1010ESPbF

MOSFET N-CH 60V 84A D2PAK

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SeekIC No. : 004376350 Detail

IRF1010ESPbF: MOSFET N-CH 60V 84A D2PAK

IRF1010ESPbF Data Sheet

floor Price/Ceiling Price

US $ .69~.69 / Piece | Get Latest Price
Part Number:
IRF1010ESPbF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~400
  • Unit Price
  • $.69
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Description



Features:

· Advanced Process Technology
· Surface Mount (IRF1010ES)
· Low-profile through-hole (IRF1010EL)
· 175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated
· Lead-Free


Specifications

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 84 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 59
IDM Pulsed Drain Current 330
PD @TC = 25°C Power Dissipation 200 W
  Linear Derating Factor 1.4 W/
VGS Gate-to-Source Voltage ±20 V
IAR Avalanche Current 50 A
EAR Repetitive Avalanche Energy 17 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting torque, 6-32 or M3 srew 10 lbf?in (1.1N?m)



Description

Advanced HEXFET® Power MOSFETs of the IRF1010ESPbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The IRF1010ESPbF is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF1010ESPbF) is available for lowprofile applications.




Parameters:

Technical/Catalog InformationIRF1010ESPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C84A
Rds On (Max) @ Id, Vgs12 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds 3210pF @ 25V
Power - Max200W
PackagingTube
Gate Charge (Qg) @ Vgs130nC @ 10V
Package / CaseD²Pak, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF1010ESPBF
IRF1010ESPBF



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