IRF1010EPBF

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 81 A
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 60 V


Features:

` Advanced Process Technology
` Ultra Low On-Resistance
` Dynamic dv/dt Rating
` 175 Operating Temperature
` Fast Switching
` Fully Avalanche Rated
` Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25 ID @ TC = 100 IDM	Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current	84 59 330	A
PD @TC = 25	Power Dissipation	200	W
	Linear Derating Factor	1.4	W/
VGS	Gate-to-Source Voltage	± 20	V
IAR EAR	Avalanche Current Repetitive Avalanche Energy	50 17	A mJ
dv/dt TJ TSTG	Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds	4.0 -55 to + 175 300 (1.6mm from case )	V/ns
	Mounting torque, 6-32 or M3 srew	10 lbf•in (1.1N•m)

Description

Advanced HEXFET^® Power MOSFETs of the IRF1010EPbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package of the IRF1010EPbF is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Parameters:

Technical/Catalog Information	IRF1010EPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	84A
Rds On (Max) @ Id, Vgs	12 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds	3210pF @ 25V
Power - Max	200W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	130nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF1010EPBF IRF1010EPBF