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IR51HD214

Features: ·Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage·High side gate drive designed for bootstrap operation·Bootstrap diode integrated into package·Accurate timing control for both Power MOSFETs Matched delay to get 50% duty cycle Matched deadtime of 1.2us·Inter...

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SeekIC No. : 004376291 Detail

IR51HD214: Features: ·Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage·High side gate drive designed for bootstrap operation·Bootstrap diode integrated into package·Accurate timin...

IR51HD214 Data Sheet

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Part Number:
IR51HD214
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

·Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage
·High side gate drive designed for bootstrap operation
·Bootstrap diode integrated into package
·Accurate timing control for both Power MOSFETs
   Matched delay to get 50% duty cycle
   Matched deadtime of 1.2us
·Internal oscillator with programmable frequency
·Zener clamped Vcc for offline operation
·Half-bridge output is out of phase with R


Pinout

Connection Diagram


Specifications

Symbol Parameter Min. Max. Units
Definition
VIN High Voltage Supply -0.3 250 V
VB High Side Floating Supply Absolute Voltage -0.3 275
VO Half-Bridge Output Voltag -0.3 VIN + 0.3
VRT RT Voltage
 -0.3 VCC + 0.3
VCT TC Voltage
 -0.3 VCC + 0.3
ICC Supply Current (Note 1) --- 25 mA
IRT RT Output Current
 -5 5
dv/dt Peak Diode Recovery dv/dt --- 4.8 V/ns
PD Package Power Dissipation @ TA +25
 --- 2.00 W
RJA Thermal Resistance, Junction to Ambient --- 60 /W
TJ Junction Temperature -55 150
TS Storage Temperature -55 150
TL Lead Temperature (Soldering, 10 seconds) --- 300



Description

The IR51HD214 is a high voltage, high speed, self- oscillating half-bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power MOSFET technology, enable ruggedized single package construction. The front-end features a programmable oscillator which functions similar to the CMOS 555 timer. The supply to the control circuit has a zener clamp to simplify offline operation. The output features two HEXFETs in a half-bridge configuration with an internally set deadtime designed for minimum cross-conduction in the half-bridge. Propagation delays of the IR51HD214 for the high and low side power MOSFETs are matched to simplify use in 50% duty cycle applications. The device can operate up to 250 volts.




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