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IR2308S

Features: • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune• Gate drive supply range from 10 to 20V• Undervoltage lockout for both channels• 3.3V, 5V and 15V input logic compatible• Cross...

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SeekIC No. : 004376149 Detail

IR2308S: Features: • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune• Gate drive supply range from 10 to 20V•...

IR2308S Data Sheet

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Part Number:
IR2308S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Floating channel designed for bootstrap operation
   Fully operational to +600V
   Tolerant to negative transient voltage
   dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for both channels
• 3.3V, 5V and 15V input logic compatible
• Cross-conduction prevention logic
• Matched propagation delay for both channels
• Outputs in phase with inputs
• Logic and power ground +/- 5V offset.
• Internal 540ns dead-time
• Lower di/dt gate driver for better noise immunity
• Also available LEAD_FREE


Pinout

Connection Diagram




Specifications

Symbol Definition Min. Max. Units
VB High side floating absolute voltage -0.3 625 V
VS High side floating supply offset voltage VB - 25 VB + 0.3
VHO High side floating output voltage VS - 0.3 VB + 0.3
VCC Low side and logic fixed supply voltage -0.3 25
VLO Low side output voltage -0.3 VCC + 0.3
VIN Logic input voltage (HIN & LIN ) VSS - 0.3 VCC + 0.3
dVS/dt Allowable offset supply voltage transient - 50 V/ns
PD Package power dissipation @ TA +25 (8 Lead PDIP) -
 1.0
 W
(8 Lead SOIC) - 0.625
RthJA Thermal resistance, junction to ambient (8 Lead PDIP) -
 125
 /W
(8 Lead SOIC) - 200
TJ Junction temperature - 150
TS Storage temperature -50 150
TL Lead temperature (soldering, 10 seconds) - 300



Description

The IR2308S are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input of the IR2308S is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.




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