IR2301

Series: -
Type: -
On-State Resistance: -
Current - Output / Channel: -
Current - Peak Output: -
Number of Outputs: 2
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Configurations: 1
Input Type: Non-Inverting
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: 8-DIP
High Side Voltage - Max (Bootstrap): 600V
Manufacturer: International Rectifier
Current - Peak: 200mA
Delay Time: 220ns
Configuration: High and Low Side, Independent
Voltage - Supply: 5 V ~ 20 V


Features:

• Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune
• Gate drive supply range from 5 to 20V
• Undervoltage lockout for both channels
• 3.3V, 5V and 15V input logic compatible
• Matched propagation delay for both channels
• Logic and power ground +/- 5V offset.
• Lower di/dt gate driver for better noise immunity
• Outputs in phase with inputs
• Also available LEAD-FREE (PbF)


Specifications

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Symbol	Definition		Min.	Max.	Units
VB	High side floating absolute voltage		-0.3	625	V
VS	High side floating supply offset voltage		VB - 25	VB + 0.3
VHO	High side floating output voltage		VS - 0.3	VB + 0.3
VCC	Low side and logic fixed supply voltage		-0.3	25
VLO	Low side output voltage		-0.3	VCC + 0.3
VIN	Logic input voltage		COM - 0.3	VCC + 0.3
dVS/dt	Allowable offset supply voltage transient		-	50	V/ns
PD	Package power dissipation @ TA +25°C	(8 lead PDIP)	-	1.0	W
		(8 lead SOIC)	-	0.625
RthJA	Thermal resistance, junction to ambient	(8 lead PDIP)	-	125	°C/W
		(8 lead SOIC)	-	200
TJ	Junction temperature		-	150	°C
TS	Storage temperature		-50	150
TL	Lead temperature (soldering, 10 seconds)		-	300

Description

The IR2301(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input of the IR2301 is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts

Parameters:

Technical/Catalog Information	IR2301
Vendor	International Rectifier
Category	Integrated Circuits (ICs)
Configuration	High and Low Side, Independent
Voltage - Supply	5 V ~ 20 V
Current - Peak	200mA
Delay Time	220ns
Package / Case	8-DIP (300 mil)
Packaging	Tube
Number of Outputs	2
Input Type	Non-Inverting
Number of Configurations	1
Operating Temperature	-40°C ~ 150°C
High Side Voltage - Max (Bootstrap)	600V
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IR2301 IR2301