Features: • Floating channel designed for bootstrap operation to +600V. Tolerant to negative transient voltage dV/dt immune• Gate drive supply range from 10 to 20V• Under voltage lockout for both channels• 3.3V, 5V, and 15V input logic input compatible• Cross-conducti...
IR2304S: Features: • Floating channel designed for bootstrap operation to +600V. Tolerant to negative transient voltage dV/dt immune• Gate drive supply range from 10 to 20V• Under voltage l...
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Symbol |
Definition |
Min. |
Max. |
Unit | |
VS |
High side offset voltage |
VB-25 |
VB + 0.3 |
V | |
VB |
High side floating supply voltage |
-0.3 |
625 | ||
VHO |
High side floating output voltage HO |
VS-0.3 |
VB + 0.3 | ||
VCC |
Low side and logic fixed supply voltage |
-0.3 |
25 | ||
VLO |
Low side output voltage LO |
-0.3 |
VCC + 0.3 | ||
VIN |
Logic input voltage (HIN, LIN) |
-0.3 |
VCC + 0.3 | ||
Com |
Logic ground |
VCC-25 |
VCC + 0.3 | ||
dVS/dt |
Allowable offset voltage SLEW RATE |
- |
50 |
V/ns | |
PD |
Package power dissipation @ TA +25°C | 8-Lead SOIC |
- |
0.625 |
W |
8-Lead PDIP |
- |
1.0 | |||
RthJA |
Thermal resistance, junction to ambient | 8-Lead SOIC |
- |
200 |
°C/W |
8-Lead PDIP |
- |
125 | |||
TJ |
Junction temperature |
- |
150 |
°C | |
TS |
Storage temperature |
-50 |
150 | ||
TL |
Lead temperature (soldering, 10 seconds) |
- |
300 |
The IR2304S are a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input of the IR2304S is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction.The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.